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MOSFET+DIODE,N CH,30V,7.3A,SO8
Varenummer:118-910
Varekode:SI4812BDY-T1-GE3
Vægt:6.0g
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Internet-pris
Inkl. moms:
Kr. 75,00
v/10Kr. 25,00
v/25Kr. 20,00
v/100Kr. 17,50
v/500Kr. 12,50
SI4812BDY-T1-GE3
  • MOSFET+DIODE,N CH,30V,7.3A,SO8
  • Transistor Polarity: N Channel
  • Drain Source Voltage Vds: 30V
  • On Resistance Rds(on): 13mohm
  • Rds(on) Test Voltage Vgs: 10V
  • Power Dissipation Pd: 1.4W
  • Operating Temperature Range: -55°C to +150°C
  • Transistor Case Style: SOIC
  • No. of Pins: 8
  • SVHC: No SVHC (20-Jun-2011)
  • Current Id Max: 7.3A
  • Power Dissipation Pd: 1.4W
  • Voltage Vgs Max: 20V
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