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Type Designator: 2SC998

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.6

Maximum collector-base voltage |Ucb|, V: 40

Maximum collector-emitter voltage |Uce|, V: 24

Maximum emitter-base voltage |Ueb|, V: 4

Maximum collector current |Ic max|, A: 0.4

Maximum junction temperature (Tj), °C: 175

Transition frequency (ft), MHz: 225

Collector capacitance (Cc), pF: 10

Forward current transfer ratio (hFE), min: 50

Noise Figure, dB: -

Package of 2SC998 transistor: TO39

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