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Type Designator: 2SC1009A

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.16

Maximum collector-base voltage |Ucb|, V: 50

Maximum collector-emitter voltage |Uce|, V: 30

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 0.05

Maximum junction temperature (Tj), °C: 180

Transition frequency (ft), MHz: 100

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 35

Noise Figure, dB: -

Package of 2SC1009A transistor: TO236

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