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SI-N 100V 5A 25W TO-8
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Type Designator: 2SD407

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 25

Maximum collector-base voltage |Ucb|, V: 100

Maximum collector-emitter voltage |Uce|, V: 100

Maximum emitter-base voltage |Ueb|, V: 7

Maximum collector current |Ic max|, A: 5

Maximum junction temperature (Tj), °C: 175

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 3000

Noise Figure, dB: -

Package of 2SD407 transistor: TO-8

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