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SI-N 60V 3A 35W TO-220F
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Type Designator: 2SD856

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 35

Maximum collector-base voltage |Ucb|, V: 60

Maximum collector-emitter voltage |Uce|, V: 60

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 3

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 40

Noise Figure, dB: -

Package of 2SD856 transistor: TO22F

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