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SI-N 60V 12A 80W 10MHz TO-3P
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Type Designator: 2SD1064R

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 80

Maximum collector-base voltage |Ucb|, V: 60

Maximum collector-emitter voltage |Uce|, V: 50

Maximum emitter-base voltage |Ueb|, V: 6

Maximum collector current |Ic max|, A: 12

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 10

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 100

Noise Figure, dB: -

Package of 2SD1064R transistor: TO247

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