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SI-N 150V 1.5A 10W DAR+DI TO-218
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Type Designator: 2SD1164

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 10

Maximum collector-base voltage |Ucb|, V: 0

Maximum collector-emitter voltage |Uce|, V: 0

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 1.5

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 8000

Noise Figure, dB: -

Package of 2SD1164 transistor: TO218

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