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SI-N 800V 25A 200W TO-3PBL

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Type Designator: 2SD1313

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 200

Maximum collector-base voltage |Ucb|, V: 800

Maximum collector-emitter voltage |Uce|, V: 350

Maximum emitter-base voltage |Ueb|, V: 7

Maximum collector current |Ic max|, A: 25

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 6

Collector capacitance (Cc), pF: 170

Forward current transfer ratio (hFE), min: 6

Noise Figure, dB: -

Package of 2SD1313 transistor: TO-3PBL

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