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SI-N 120V 4A 20W 180MHz TO-251

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Type Designator: 2SD1816S

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 20

Maximum collector-base voltage |Ucb|, V: 120

Maximum collector-emitter voltage |Uce|, V: 100

Maximum emitter-base voltage |Ueb|, V: 6

Maximum collector current |Ic max|, A: 4

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 180

Collector capacitance (Cc), pF: 40

Forward current transfer ratio (hFE), min: 140

Noise Figure, dB: -

Package of 2SD1816S transistor: TO251

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