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N-FET 450V 10A 120W TO-3PBL
Varenummer:128-346
Varekode:2SK386
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2SK3862SK386

Type Designator: 2SK386

Type of 2SK386 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 120

Maximum drain-source voltage |Uds|, V: 450

Maximum gate-source voltage |Ugs|, V: 20

Maximum drain current |Id|, A: 10

Maximum junction temperature (Tj), °C: 150

Rise Time of 2SK386 transistor (tr), nS: 50

Drain-source Capacitance (Cd), pF: 400

Maximum drain-source on-state resistance (Rds), Ohm: 0.5

Package: TO-3PBL

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