MOSFET-N 30V 0,05A 0,36W TO-72
3N201 MOSFET
Type of control channel: N -Channel
Maximum power dissipation (Pd), W: 0.36
Maximum drain-source voltage |Uds|, V: 25
Maximum gate-source voltage |Ugs|, V: 30
Maximum drain current |Id|, A: 0.05
Maximum junction temperature (Tj), °C: 200
Rise Time of 3N201 transistor (tr), nS:
Drain-source Capacitance (Cd), pF:
Maximum drain-source on-state resistance (Rds), Ohm:
Package: TO-72
- v/10 – Kr. 12,50
- v/50 – Kr. 8,75
MOSFET-N 30V 0,05A 0,36W TO-72
3N201 MOSFET
Type of control channel: N -Channel
Maximum power dissipation (Pd), W: 0.36
Maximum drain-source voltage |Uds|, V: 25
Maximum gate-source voltage |Ugs|, V: 30
Maximum drain current |Id|, A: 0.05
Maximum junction temperature (Tj), °C: 200
Rise Time of 3N201 transistor (tr), nS:
Drain-source Capacitance (Cd), pF:
Maximum drain-source on-state resistance (Rds), Ohm:
Package: TO-72