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12A P-N-P monolithic darlington power transistor TO-3
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Kr. 50,00

2N6051 Transistor (IC) Datasheet. Cross Reference Search.
2N6051 Equivalent

Type Designator: 2N6051

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 150

Maximum collector-base voltage |Ucb|, V: 80

Maximum collector-emitter voltage |Uce|, V: 80

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 12

Maksimalna temperatura (Tj), °C: 200

Transition frequency (ft), MHz: 4

Collector capacitance (Cc), pF: 500

Forward current transfer ratio (hFE), min: 750

Noise Figure, dB: -

Package of 2N6051 transistor: TO3

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