N-Ch 100V 4,9A 43W 0,8R TO220AB
Type Designator: RRF512
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 43 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Drain Current |Id|: 4.9 A
Maximum Junction Temperature (Tj): 150 °C
Maximum Drain-Source On-State Resistance (Rds): 0.8 Ohm
Package: TO220
- v/10 – Kr. 4,80
- v/25 – Kr. 2,75
N-Ch 100V 4,9A 43W 0,8R TO220AB
Type Designator: RRF512
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 43 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Drain Current |Id|: 4.9 A
Maximum Junction Temperature (Tj): 150 °C
Maximum Drain-Source On-State Resistance (Rds): 0.8 Ohm
Package: TO220