MOSFET NCh 2.6ohm VGS10V10uAVDS80V TO-220-3

Varenummer:	150-988
Varekode:	TK100A08N1,S4X

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Manufacturer:	Toshiba
Product Category:	MOSFET
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	80 V
Id - Continuous Drain Current:	100 A
Rds On - Drain-Source Resistance:	2.6 mOhms
Vgs - Gate-Source Voltage:	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	130 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	45 W
Channel Mode:	Enhancement
Tradename:	U-MOSVIII-H
Packaging:	Tube
Brand:	Toshiba
Configuration:	Single
Height:	15 mm
Length:	10 mm
Product Type:	MOSFET
Series:	TK100A08N1

	50
Subcategory:	MOSFETs
Transistor Type:	1 N-Channel
Width:	4.5 mm
Unit Weight:	2 g