MOSFET N-ch 200V 21A 125W 0,13R TO-220
Type Designator: BUZ30A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 125 W
Maximum Drain-Source Voltage |Vds|: 200 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 21 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 70 nS
Drain-Source Capacitance (Cd): 280 pF
Maximum Drain-Source On-State Resistance (Rds): 0.13 Ohm
Package: TO-220
- v/10 – Kr. 18,75
- v/50 – Kr. 15,00
- v/100 – Kr. 11,25
MOSFET N-ch 200V 21A 125W 0,13R TO-220
Type Designator: BUZ30A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 125 W
Maximum Drain-Source Voltage |Vds|: 200 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 21 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 70 nS
Drain-Source Capacitance (Cd): 280 pF
Maximum Drain-Source On-State Resistance (Rds): 0.13 Ohm
Package: TO-220