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N-Ch. MOSFET 400V 14A 150W 0,3R TO-3

Varenummer:154-367
Varekode:IRF350
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Kr. 37,50
v/10Kr. 31,25

IRF350 N-Ch. MOSFET 400V 14A 150W 0,3R TO-3
Manufacturer
Infineon (IRF)
Type of transistor
N-MOSFET
Technology
HEXFET®
Polarisation
unipolar
Drain-source voltage
400V
Drain current
14A
Power dissipation
150W
Case
TO3
Mounting
THT
Kind of package
tube
Kind of channel
enhanced
Type Designator: IRF350
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 14 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 110(max) nC
   trⓘ - Rise Time: 190(max) nS
   Cossⓘ - Output Capacitance: 680 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: TO3
 
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