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  2. Komponenter
  3. Transistorer
  4. MOSFET SMD
  5. IRF630NSPBF

N-Ch 200V 9,3A 82W 0,30R D²Pak

Varenummer:78-088
Varekode:IRF630NSPBF
Vægt:1.3g
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Internet-pris
Inkl. moms
Kr. 17,78
v/10Kr. 11,98
v/25Kr. 7,8985
v/100Kr. 5,6869

IRF630NSPBF N-Ch 200V 9,3A 82W 0,30R D²PakIRF630NSPBF N-Ch 200V 9,3A 82W 0,30R D²Pak D�PakIRF630NSPBF N-Ch 200V 9,3A 82W 0,30R D²Pak �
  • MOSFET, N, 200V, 9.5A, D2-PAK
  • Transistor Polarity: N Channel
  • Continuous Drain Current Id: 9.3A
  • Drain Source Voltage Vds: 200V
  • On Resistance Rds(on): 300mohm
  • Rds(on) Test Voltage Vgs: 10V
  • Threshold Voltage Vgs: 4V
  • Power Dissipation Pd: 82W
  • Transistor Case Style: TO-263
  • No. of Pins: 3
  • Operating Temperature Max: 175°C
  • MSL: MSL 1 - Unlimited
  • SVHC: No SVHC (16-Dec-2013)
  • Alternate Case Style: D2-PAK
  • Avalanche Single Pulse Energy Eas: 94mJ
  • Capacitance Ciss Typ: 575pF
  • Current Iar: 9.3A
  • Current Id Max: 9.3A
  • Current Idss Max: 25µA
  • Current Temperature: 25°C
  • External Depth: 15.49mm
  • External Length / Height: 4.69mm
  • External Width: 10.16mm
  • Fall Time tf: 15ns
  • Full Power Rating Temperature: 25°C
  • Junction Temperature Tj Max: 175°C
  • Junction Temperature Tj Min: -55°C
  • Junction to Case Thermal Resistance A: 1.83°C/W
  • N-channel Gate Charge: 35nC
  • No. of Transistors: 1
  • On State resistance @ Vgs = 10V: 300mohm
  • Operating Temperature Min: -55°C
  • Operating Temperature Range: -55°C to +175°C
  • Power Dissipation on 1" Sq. PCB: 3.8W
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