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Transistor MOSFET, N-Ch, 100V, 33A, 130W, 0,044R, TO220AB

Varenummer:92-033
Varekode:IRF540NPBF
Vægt:2.7g
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Inkl. moms
Kr. 24,74
v/10Kr. 18,58
v/25Kr. 14,87
v/100Kr. 9,89
v/1000Kr. 7,4125

IRF540NPBF Transistor MOSFET, N-Ch, 100V, 33A, 130W, 0,044R, TO220ABIRF540NPBF Transistor MOSFET, N-Ch, 100V, 33A, 130W, 0,044R, TO220AB TO220AB
Produkt: MOSFET
Transistor polaritet: N-Ch
Drain-Source spænding, max: 100V
Continuous drain current, max: 33A
Drain-Source On-modstand, Rds(on): 0,044Ω
Effekt, max.: 130W
Komponenthus: TO220

Transisitor MOSFET, N, 100V, 33A, TO-220

  • Transistor Polarity: N Channel
  • Continuous Drain Current Id: 27A
  • Drain Source Voltage Vds: 100V
  • On Resistance Rds(on): 52mohm
  • Rds(on) Test Voltage Vgs: 10V
  • Threshold Voltage Vgs Typ: 4V
  • Power Dissipation Pd: 94W
  • Transistor Case Style: TO-220AB
  • No. of Pins: 3
  • SVHC: No SVHC (19-Dec-2011)
  • Current Id Max: 33A
  • Current Temperature: 25°C
  • Device Marking: IRF540N
  • Full Power Rating Temperature: 25°C
  • Junction to Case Thermal Resistance A: 1.1°C/W
  • Lead Spacing: 2.54mm
  • No. of Transistors: 1
  • Package / Case: TO-220AB
  • Pin Configuration: a
  • Pin Format: 1 g
  • 2 d/tab
  • 3 s
  • Power Dissipation Pd: 94W
  • Power Dissipation Pd: 94W
  • Pulse Current Idm: 110A
  • Termination Type: Through Hole
  • Voltage Vds Typ: 100V
  • Voltage Vgs Max: 4V
  • Voltage Vgs Rds on Measurement: 10V