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N-FETMOS 60V, 0,2A, 0,4W, <5Ohm, <10/10ns TO-92

Varenummer:98-613
Varekode:2N7000
Vægt:1.4g
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Internet-pris
Inkl. moms
Kr. 10,00
v/10Kr. 7,50
v/30Kr. 5,00
v/100Kr. 3,75

2N7000 N-FETMOS 60V, 0,2A, 0,4W, <5Ohm, <10/10ns TO-92
  • MOSFET, N CHANNEL, 200MA, 60V, TO-92
  • Transistor Polarity: N Channel
  • Continuous Drain Current Id: 200mA
  • Drain Source Voltage Vds: 60V
  • On Resistance Rds(on): 5.3ohm
  • Rds(on) Test Voltage Vgs: 10V
  • Threshold Voltage Vgs Typ: 2.1V
  • Power Dissipation Pd: 400mW
  • Operating Temperature Range: -55°C to +150°C
  • Transistor Case Style: TO-92
  • No. of Pins: 3
  • SVHC: No SVHC (19-Dec-2012)
  • Current Id Max: 200mA
  • Current Temperature: 25°C
  • Device Marking: 2N7000
  • Full Power Rating Temperature: 25°C
  • Lead Spacing: 1.27mm
  • No. of Transistors: 1
  • Package / Case: TO-92
  • Power Dissipation Pd: 400mW
  • Power Dissipation Pd: 400mW
  • Pulse Current Idm: 500mA
  • Voltage Vds Typ: 60V
  • Voltage Vgs Max: 2.1V
  • Voltage Vgs Rds on Measurement: 10V
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