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N-FET 500V 13A 85W TO-3PBL

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Type Designator: 2SK1181

Type of 2SK1181 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 85

Maximum drain-source voltage |Uds|, V: 500

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 13

Maximum junction temperature (Tj), °C: 150

Rise Time of 2SK1181 transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 2700

Maximum drain-source on-state resistance (Rds), Ohm: 0.4

Package: TO-3PBL

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