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N-FET 800V 3A 80W TO-3P

Varenummer:128-350
Varekode:2SK415
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2SK415 N-FET 800V 3A 80W TO-3P

Type Designator: 2SK415

Type of 2SK415 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 80

Maximum drain-source voltage |Uds|, V: 800

Maximum gate-source voltage |Ugs|, V: 20

Maximum drain current |Id|, A: 3

Maximum junction temperature (Tj), °C: 150

Rise Time of 2SK415 transistor (tr), nS: 35

Drain-source Capacitance (Cd), pF: 120

Maximum drain-source on-state resistance (Rds), Ohm: 5

Package: TO-3P