JavaScript seems to be disabled in your browser.

You must have JavaScript enabled in your browser to utilize the functionality of this website. Click here for instructions on enabling javascript in your browser.

  2. Komponenter
  3. Transistorer
  4. MOSFET
  5. BUZ357

N-Ch 1000V 5,1A 125W 2R TO-218

Varenummer:153-298
Varekode:BUZ357
Lagervare!
Henter lager-information...
Henter lager-information fra leverandører...
Internet-pris
Ekskl. moms.
Kr. 40,00

BUZ357 N-Ch 1000V 5,1A 125W 2R TO-218

Type Designator: BUZ357

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 125 W

Maximum Drain-Source Voltage |Vds|: 1000 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 5.1 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 100 nS

Drain-Source Capacitance (Cd): 170 pF

Maximum Drain-Source On-State Resistance (Rds): 2 Ohm

Package: TO-218AA

Varegrupper
Her kan du betale med